Calculating voltage bias with gaussian software

We apply ultrafast pure-rotational coherent anti-Stokes Raman scattering (CARS) for temperature and relative oxygen concentration measurements in the plume emanating from a burning, aluminized ammonium-perchlorate propellant strand. Here, (Al x)Ga 1вЂ“xN photodetectors were designed to explore spectral sensitivity by altering x from 0 to 0.3.

Here, coupled with the independently measured Hall mobility and electric field, we computed the carrier transit time of the devices to be as short as 1.31 ps and the bias-voltageвЂ“independent external quantum efficiencies were as high as 70% at 60 V for n-doped and intrinsic devices when operated in the reverse bias regime. Various electrode geometries were fabricated to investigate the influence of metal contact shapes on the devicesвЂ™ performance indices with emphasis on the response speed and bias-voltageвЂ“independent efficiency. These devices are limited by moreВ В» the carrier transit time due to the negligible capacitance presented by the interdigitated fingers. Typically, MSM PDвЂ™s grown on (Al)GaN thin films result in ultrafast photodetection because of their highly mobile carriers.

The ability to easily select the photodetected wavelength by simply varying the aluminum content of GaN thin film (Al xGa 1вЂ“xN) is a significant advantage of these group IIIвЂ“V compounds. (Al)GaN-based UV PDвЂ™s have wide and tunable direct band gaps. Aluminum gallium-nitride (Al xGa 1вЂ“xN)-based metalвЂ“semiconductorвЂ“metal (MSM) ultraviolet photodetectors photodetectors (PDвЂ™s) have been successfully designed and fabricated using conventional photolithography techniques and tested experimentally to study their spectral sensitivity across different Al content, x, with x varying from 0 to 0.3.

Calculating voltage bias with gaussian software